| PART |
Description |
Maker |
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| NX7002AKS |
60 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDPB30XN |
20 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDXB600UNE |
20 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDXB950UPE |
20 V, dual P-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDPB55XP |
20 V, dual P-channel Trench MOSFET
|
NXP Semiconductors
|
| FDMC8030 |
Dual N-Channel Power Trench? MOSFET 40 V, 12 A, 10 mΩ
|
Fairchild Semiconductor
|
| FDME1024NZT |
Dual N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| 2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| NTJD4152PT1 NTJD4152PT1G |
Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88
|
ON Semiconductor
|
